complementary plastic silicon power transistors . . . designed for lower power audio amplifier and low current, highspeed switching applications. ? low collectoremitter sustaining voltage e v ceo(sus) 60 vdc (min) e bd787, bd788 ? high currentgain e bandwidth product e f t = 50 mhz (min) @ i c = 100 madc ? collectoremitter saturation voltage specified at 0.5, 1.0, 2.0 and 4.0 adc ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? rating ????? ????? symbol ?????? ?????? bd787 bd788 ??? ??? unit ???????????? ???????????? collectoremitter voltage ????? ????? v ceo ?????? ?????? 60 ??? ??? vdc ???????????? ???????????? collectorbase voltage ????? ????? v cbo ?????? ?????? 80 ??? ??? vdc ???????????? ???????????? emitterbase voltage ????? ????? v ebo ?????? ?????? 6.0 ??? ??? vdc ???????????? ? ?????????? ? ???????????? collector current e continuous e peak ????? ? ??? ? ????? i c ?????? ? ???? ? ?????? 4.0 8.0 ??? ? ? ? ??? adc adc ???????????? ???????????? base current ????? ????? i b ?????? ?????? 1.0 ??? ??? adc ???????????? ? ?????????? ? ???????????? total power dissipation @ t c = 25 c derate above 25 c ????? ? ??? ? ????? p d ?????? ? ???? ? ?????? 15 0.12 ??? ? ? ? ??? watts w/ c ???????????? ???????????? operating and storage junction temperature range ????? ????? t j , t stg ?????? ?????? 65 to +150 ??? ??? c ??????????????????????? ? ????????????????????? ? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? r q jc ?????? ?????? 8.34 ??? ??? c/w 16 12 0 20 40 60 100 120 140 160 figure 1. power derating t, temperature ( c) p d , power dissipation (watts) 80 4.0 8.0 1.6 1.2 0 0.4 0.8 p d , power dissipation (watts) t a t c on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 10 1 publication order number: bd787/d bd787 bd788 4 ampere power transistors complementary silicon 60 volts 15 watts case 7709 to225aa type npn pnp 3 2 1 style 1: pin 1. emitter 2. collector 3. base
bd787 bd788 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? *electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 10 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 60 ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 20 vdc, i b = 0) (v ce = 30 vdc, i b = 0) ????? ? ??? ? ????? i ceo ??? ? ? ? ??? e ???? ? ?? ? ???? 100 ??? ? ? ? ??? m adc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 80 vdc, v be(off) = 1.5 vdc) (v ce = 40 vdc, v be(off) = 1.5 vdc, t c = 125 c) ????? ? ??? ? ????? i cex ??? ? ? ? ??? e e ???? ? ?? ? ???? 1.0 0.1 ??? ? ? ? ??? m adc madc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter cutoff current (v eb = 6.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? e ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? m adc ????????????????????????????????? ????????????????????????????????? on characteristics(1) ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 200 madc, v ce = 3.0 vdc) (i c = 1.0 adc, v ce = 3.0 vdc) (i c = 2.0 adc, v ce = 3.0 vdc) (i c = 4.0 adc, v ce = 3.0 vdc) ????? ? ??? ? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ? ? ? ??? 40 25 20 5.0 ???? ? ?? ? ? ?? ? ? ?? ? ???? 250 e e e ??? ? ? ? ? ? ? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 500 madc, i b = 50 madc) (i c = 1.0 adc, i b = 100 madc) (i c = 2.0 adc, i b = 200 madc) (i c = 4.0 adc, i b = 800 madc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? e e e e ???? ? ?? ? ? ?? ? ???? 0.4 0.6 0.8 2.5 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter saturation voltage (i c = 2.0 adc, i b = 200 madc) ????? ? ??? ? ????? v be(sat) ??? ? ? ? ??? e ???? ? ?? ? ???? 2.0 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (i c = 2.0 adc, v ce = 3.0 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e ???? ? ?? ? ???? 1.8 ??? ? ? ? ??? vdc ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? currentgain e bandwidth product (i c = 100 madc, v ce = 10 vdc, f = 10 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 50 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz ?????????????????????? ? ???????????????????? ? ?????????????????????? output capacitance (v cb = 10 vdc, i c = 0) bd787 (f = 0.1 mhz) bd788 ????? ? ??? ? ????? c ob ??? ? ? ? ??? e e ???? ? ?? ? ???? 50 70 ??? ? ? ? ??? pf ?????????????????????? ? ???????????????????? ? ?????????????????????? smallsignal current gain (i c = 200 madc, v ce = 10 vdc, f = 1.0 khz) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 10 ???? ? ?? ? ???? e ??? ? ? ? ??? e *indicates jedec registered data (1) pulse test; pulse width 300 m s, duty cycle 2.0%.
bd787 bd788 http://onsemi.com 3 figure 2. switching time test circuit 500 0.04 figure 3. turnon time i c , collector current (amp) t, time (ns) 70 30 20 5.0 0.06 0.2 0.4 0.6 t d @ v be(off) = 5.0 v v cc = 30 v i c /i b = 10 t j = 25 c + 11 v 0 + 30 v scope r b - 4 v t r , t f 10 ns duty cycle = 1.0% r c t r 7.0 10 1.0 4.0 d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma for pnp test circuit, reverse all polarities. 25 m s - 9.0 v d 1 51 r b and r c varied to obtain desired current levels v cc bd787 (npn) bd788 (pnp) 300 200 100 50 0.1 2.0 figure 4. thermal response t, time (ms) 1.0 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 r q jc(t) = r(t) r q jc r q jc = 8.34 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0 (single pulse) 0.2 0.05 0.1 0.02 0.01 r(t), transient thermal resistance (normalized) figure 5. active region safe operating area 10 1.0 v ce , collector-emitter voltage (volts) 5.0 2.0 0.5 0.01 2.0 5.0 10 50 100 bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited 0.05 0.02 i c , collector current (amp) bd787 (npn) bd788 (pnp) 20 curves apply below rated v ceo t j = 150 c dc 5.0 ms 1.0 ms 500 m s 100 m s 1.0 0.1 30 70 60 v 3.0 7.0 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c: t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c, t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
bd787 bd788 http://onsemi.com 4 0.04 figure 6. turnoff time i c , collector current (amp) t, time (ns) 0.06 0.1 0.2 0.6 1.0 2.0 4.0 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s 0.4 t f (npn) (pnp) 2000 20 700 100 200 1000 500 300 30 50 70 200 1.0 figure 7. capacitance v r , reverse voltage (volts) 10 2.0 3.0 5.0 7.0 20 30 100 10 c, capacitance (pf) 100 70 50 30 t j = 25 c c ib c ob (npn) (pnp) 20 50 70 400 0.04 figure 8. dc current gain i c , collector current (amp) 0.1 0.2 0.4 0.6 1.0 2.0 100 50 30 300 70 h fe , dc current gain t j = 150 c 25 c -55 c 200 20 4.0 npn bd787 npn bd788 v ce = 1.0 v v ce = 3.0 v 0.06 200 0.04 i c , collector current (amp) 0.1 0.2 0.4 0.6 1.0 2.0 50 20 100 30 h fe , dc current gain t j = 150 c 25 c -55 c 70 10 4.0 v ce = 1.0 v v ce = 3.0 v 0.06 2.0 0.04 i c , collector current (amp) 0.2 0.6 2.0 4.0 0.8 0.4 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v, voltage (volts) figure 9. aono voltages 0.1 1.0 0.4 1.6 1.2 v be(on) @ v ce = 3.0 v 2.0 i c , collector current (amp) 0.8 0.4 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v, voltage (volts) 1.6 1.2 v be @ v ce = 3.0 v 0.06 0.04 0.2 0.6 2.0 4.0 0.1 1.0 0.4 0.06
bd787 bd788 http://onsemi.com 5 +2.5 figure 10. temperature coefficients i c , collector current (amp) v , temperature coefficients (mv/ c) q +2.0 +1.5 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 q vb for v be * q vc for v ce(sat) *applies for i c /i b h fe/3 +1.0 25 c to 150 c - 55 c to 25 c 25 c to 150 c - 55 c to 25 c 0.04 0.2 0.6 2.0 4.0 0.1 1.0 0.4 0.06 +2.5 i c , collector current (amp) v , temperature coefficients (mv/ c) q +2.0 +1.5 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 q vb for v be * q vc for v ce(sat) *applies for i c /i b h fe/3 +1.0 25 c to 150 c - 55 c to 25 c 25 c to 150 c - 55 c to 25 c 0.04 0.2 0.6 2.0 4.0 0.1 1.0 0.4 0.06
bd787 bd788 http://onsemi.com 6 package dimensions case 7709 issue w to225aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. b a m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 --- 1.02 --- style 1: pin 1. emitter 2. collector 3. base
bd787 bd788 http://onsemi.com 7 notes
bd787 bd788 http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bd787/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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